Design and Analysis of a 15-kV Package for Wide Bandgap Semiconductor

摘要

The development of wide bandgap semiconductor materials such as silicon carbide (SiC) has made possible devices that exceed the voltage ratings of conventional component packaging schemes. As such a new class of high voltage packages must be developed to realize the full potential of these technologies. We report on the electrostatic analysis and design of a t5-kV ceramic package using the ANSYS Multiphysics software. To baseline our work. a standard ceramic package was characterized and modeled for high voltage operation. With this information. a new package geometry was designed, and additional SiC die requirements were identified via finite element simulations.