2.3 Micron High Power Continuous Wave Diode Laser Arrays.

摘要

Report developed under STTR contract for topic AFO3TO25 (2.3 Micron High Power Continuous Wave Diode Laser Arrays). This final technical report describes progress made to demonstrate the technical feasibility of high power GaSb based semiconductor laser arrays. These arrays have many potential applications includinq infrared countermeasures (IRCM), pumping of solid state lasers, low probability of intercept communication links, and trace gas analysis. Civilian applications exist in the fields of medical diagnostics and dermatological treatments. The research involved the fabrication and complete characterization of single emitter GaSb based devices. Successfbl results with the single emitter devices led to the demonstration, for the first time, of a one-dimensional 2.3 micr9n laser array. The array produced 10 watts in continuous wave operation, 18.5W in long pulse operation, and over 20W in short pulse operation (short pulse power limited by current source).