Fermi Electronics: A Means of Correlating and Canceling Shot Noise From Solid State Devices

摘要

This project has developed a formalism for computing the shot noise in resonant- tunneling structures having an arbitrary number of quantum wells. It is based on the electrostatic feedback effect in quantum-well structures and is the first known shot noise formalism that treats the electrostatic and quantum effects in a self-consistent fashion. Simulation results are analyzed and compared to experimental results for an InGaAs/AlAs double-barrier structure, which is the fastest resonant tunneling diode ever characterized for its noise properties. Shot noise reduction and enhancement are predicted in the positive and negative differential resistance region, respectively, in satisfactory agreement with experiment. The shot noise reduction effect is then studied for multiple-well resonant tunneling diodes. It is found that in properly designed structures the shot noise factor.