首页> 美国政府科技报告 >Formation of Porous Silicon Carbide and its Suitability as a Chemical and Temperature Detector
【24h】

Formation of Porous Silicon Carbide and its Suitability as a Chemical and Temperature Detector

机译:多孔碳化硅的形成及其作为化学和温度检测器的适用性

获取原文

摘要

The need to sense chemical mixtures in a variety of hostile environments (such as high temperature caustic gases) continues to grow. However, silicon electrical devices are limited to relatively low temperatures.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号