Synthesis, Characterization, Properties and Performance of Novel Direct Band Gap Semiconductors; Final rept. 15 Jul 2004-14 Oct 2005

摘要

The work performed using support from this grant has focused on the following: (1) the development of ZrB2 buffer layers and Si-Ge-Sn compliant templates grown directly upon Si (100), and (2) the demonstration of these systems in mismatched heteroepitaxy of tetrahedral semiconductors including III- V compounds and group IV materials with Si substrates.