Optically-gated Non-latched High Gain Power Device

摘要

GaAs based optically-triggered power transistor (OTPT) has been developed for fast, repetitive, non-latched switching and control of power semiconductor device (PSD) for power electronics applications. OTPT has been coupled to different PSDs and overall switching dynamics is shown to be controlled by optical intensity modulation. Scalability of this concept over a wide range of PSDs has been demonstrated. Power electronics system level parameters such as power conversion efficiency, dv/dt and di/dt stress on PSD and electromagnetic noise emission spectrum, which depend directly on the switching dynamics of PSD, are also shown to be optically modulated. Experimental validations are presented along with theoretical analyses for each major milestone.