Growth and Transfer of Graphene for Device Fabrication.

摘要

The unique electronic properties of graphene enable the development of field effect transistors with potential for speeds much higher than the existing technology. Diluted methane chemical vapor deposition growth of graphene on a nickel substrate has resulted in potentially useful multilayer graphene layers. These graphene layers were grown on nickel substrates deposited onto silicon (Si)/silicon dioxide (SiO2) wafers by evaporation and sputter methods. The graphene must be transferred from the nickel substrate onto a template more suitable for device fabrication. However, the current graphene transfer process is not fully mature and presents a number of challenges. In the transfer process, a polymer coating is applied to the graphene, and the original materials underneath are removed. A coating of photoresist is spun and hardened on top of the graphene, and then the substrate is removed with a buffered oxide etch and a nickel etch. One challenge is removal of the photoresist from the surface of the graphene without film wrinkles, cracks, and contamination. Alternative solutions that minimize damage to the graphene during the transfer process are currently being explored.