Ultra High Speed Germanium Mesa Switching Transistor

机译：超高速锗台面开关晶体管

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摘要

The purpose of the present work is to develop a saturated switching transistor suitable for switching rates as high as 125 Mc.

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作者
Granberry, D. S.; Wurst, E. C.; Petritz, R. L.;
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年度 1962
页码 p.1-28
总页数 28
原文格式 PDF
正文语种 eng
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关键词
Transistors ; Germanium ; Electronic switches ; Design;

机译：晶体管;锗;电子开关;设计;

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专利

1. Terahertz radiation from ultrahigh-speed field-effect transistors induced by ultrafast optical gate switching [J] . T. Kondo, K. Hirakawa Applied Physics Letters . 2007,第19期

机译：超高速光闸开关引起的超高速场效应晶体管的太赫兹辐射
2. Improving Switching Characteristics of p-type Copper Oxide Thin-film Transistors by Germanium Oxide Passivation through Reactive Sputtering [J] . Won Kyung Min, Sung Pyo Park, Tae Soo Jung, SID International Symposium: Digest of Technology Papers . 2019,第3期

机译：通过反应溅射通过氧化锗钝化改善P型氧化铜薄膜晶体管的开关特性
3. Strained-$hbox{Si}_{1 - x}hbox{Ge}_{x}/hbox{Si}$ Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior [J] . Nayfeh O. M., Hoyt J. L., Antoniadis D. A. Electron Devices, IEEE Transactions on . 2009,第10期

机译：应变$ hbox {Si} _ {1-x} hbox {Ge} _ {x} / hbox {Si} $带到带隧道晶体管：隧道结锗成分和掺杂浓度对开关行为的影响
4. A germanium ultra high speed switching transistor [C] . Granberry D., Martin D.D., Orris E., Electron Devices Meeting, 1961 Internationa . -1

机译：锗超高速开关晶体管
5. Advanced Insulated-Gate Bipolar Transistors for High-Speed Hard-Switching Applications [D] . Feng, Hao. 2015

机译：高速绝缘栅双极晶体管，用于高速硬开关应用
6. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices [O] . Pavan Nukala, Chia-Chun Lin, Russell Composto, -1

机译：碲化锗相变存储器件中通过缺陷工程实现的超低功耗开关
7. The life of germanium alloy junction power transistors in switching applications [O] . Shenton Graham Deaville Electrical Engineering Faculty of Engineering UNSW 1965

机译：锗合金结功率晶体管在开关应用中的寿命

Ultra High Speed Germanium Mesa Switching Transistor

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