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The Improvement of Production Techniques to Increase the Reliability of Diffused Silicon Controlled Switches Types 2n689

机译:生产技术的改进提高2n689型扩散硅控开关的可靠性

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This report covers the work performed on the device package, the all-diffused silicon controlled rectifier subassembly, the determination of consequences upon electrical behavior of dislocation-impurity interaction in all-diffused silicon, and the results of blocking voltage step-stress tests conducted on the present alloy-diffused product. (Author)

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