Improvement of Production Techniques to Increase the Reliability of Silicon Planar Epitaxial: Transistor (WX4001) Logic Gate (Wm 201) Flip-Flop (Wm 202) AC Binary (Wm 213)

摘要

Numerous reliability tests begun in previous quarters were completed and extensive failure analyses were performed. Emphasis was placed upon failure analysis during the period, with most effort being placed on the WX 4001 device. The majority of the failures were thermally induced channels, followed by open bonds due to formation of purple plague at high temperatures in the step stress tests. The failure modes established confirmed the validity of the process improvements incorporated in present processing. The production run was begun during the period, and all fabrication was completed. Quarterly samples were delivered. The device specifications were finalized, and the Quality Control Manual was approved. The final Reliability Verification Plan is included as Appendix I. (Author)