NINTH QUARTERLY REPORT PRODUCTION ENGINEERING MEASURE 'HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE)'

摘要

The Ninth Quarterly Report covers work performed during the period 29 May 1965 through 28 August 1965, Contained herein are results obtained from the use of higher gold diffusion temperatures and a decrease in starting material resistivity, as well as a change in geometry of the three-terminal die. Also discussed are changes in measurement techniques and conditions. Summaries of device characteristics are also tabulated herein.