EFFECT OF TRANSISTOR DESIGN PARAMETERS ON RADIATION RESPONSE (POWER TRANSISTORS)

摘要

The purpose of this program is to determine those design characteristics and fabrication techniques for a silicon planar power transistor that will minimize the deleterious effects of high energy ionizing and displacement producing radiation. The method being utilized is statistical and consists of a factorially designed experiment together with analysis of variance techniques applied to a selection of specially fabricated transistors. During this Quarter the major effort was spent m working out the details of the experimental design, and in developing the method of data analysis, which will use digital techniques. In addition, a preliminary irradiation of six representative planar power devices was carried out. A deviation from linearity was noted in a plot of common base current gain as a function of fluence. The transistors to be irradiated in the first factorial experiment were fabricated and delivered for testing.