Long-Wave Infrared Semiconductor Negative Refraction Metamaterials for High-Resolution Imaging.

摘要

The authors have theoretically developed and experimentally verified a set of multilayered metamaterials with negative refraction response spanning the frequency range 8...11 microns (frequency-independent index spanning 8...9.5 microns), leading to the increase of bandwidth of negative refraction by 27%. They also designed and fabricated quantum cascade structures integrated into semiconductor metamaterials; experimental characterization indicates QC action spectrally overlapping with negative refraction region. Finally, the authors theoretically developed a system that is capable of achieving focal spots of the order of 1 micron, and a new analytical technique that can be utilized to image subwavelength objects in the far field.