Study of Thin Film Dielectrics and Insulators for Cryogenic Applications

摘要

The report presents the results of experimental investigations into the use of thin film dielectric materials silicon oxide and bismuth trioxide in cryogenic applications. Particular attention is given to the use of SiO with zirconium. Thin film capacitors of Zr-SiO-Zr were deposited and tested at temperatures from 300K to 4.2K. Results indicate that there is an interaction between zirconium and SiO films. Effective, useful capacitors were deposited and tested with dielectric thicknesses of 4000A. A new method of vacuum deposition of Zr utilizing electron bombardment is reported. Thermal cycling of a Pb-SiO thin film solenoid indicates that large areas of thin film devices are more susceptible to peeling when going from room temperature to the temperature of liquid helium. Nonlinear volt-ampere characteristics are reported from bismuth trioxide thin film dielectrics when used with gold electrodes. (Author)