Investigation of Highly-Doped Schottky-Barrier Field-Effect Transistors

摘要

The electrical properties of Schottky-barrier field-effect transistors realized in silicon and GaAs technology have been investigated in the medium and high doping range (10 to the 17th power/cc to 10 to the 18th power/cc) for the conducting channel. This report summarizes the present status of work and describes the significant steps taken in the optimization of microwave properties. In the first chapter design parameters are discussed. The second chapter reports on measured microwave properties as obtained on our best 1 micrometer silicon and GaAs Schottky-barrier field-effect transistors. The third chapter deals with future improvements expected to be attained. The last chapter summarizes the most important steps taken in GaAs technology to achieve optimal device properties and describes the latest results obtained on transistors with high doping concentrations in the conducting channel. (Author)