Photoemission Spectroscopy using Synchrotron Radiation. I. Overviews of Valence-Band Structure for Ge, GaAs, GaP, InSb, ZnSe, CdTe, and AgI.

摘要

The authors determine bandwidths and critical-point positions with respect to the valence-band edge for the valence bands of several extensively studied semiconductors (with an accuracy of about 0.3 eV) by using photoemission densities of states derived from photoemission spectra obtained in the 24-78-eV photon energy range. These photoemission spectra were obtained using synchrotron radiation from an electron storage ring; a double-pass, cylindrical, electrostatic, electron energy analyzer; and samples cleaved and measured in situ in ultrahigh vacuum. They give a detailed description of the data-reduction techniques by which electronic state densities and certain valence-band feature positions. (Author)