Photoemission Valence-Band Densities of States for Si, Ge and GaAs using Synchrotron Radiation.

摘要

Experimental valence band Optical Densities of States for Si, Ge and GaAs were obtained from ultraviolet photoemission energy distribution curves at about 25eV of photon energy. The width of the upper two valence bands of Si and the positions of several energy band minima for the second and third valence bands of Ge and GaAs have been accurately determined. Comparing with theoretical calculations based on optical data, we find good agreement for Si and observe significant differences for Ge and GaAs. (Author)