Conduction Changes in GUNN Devices under the Influence of 10.6and 0.6328micrometer Fluxes.

摘要

The room temperature response (conductance) of GaAs material in a GUNN device structure under the influence of 10.6micrometer and 0.6328micrometer irradiation was investigated. Both continuous wave and pulsed irradiations were used in making measurements on devices placed in dc and 60Hz dynamic test circuits. Negative and positive conductance changes were determined from the CO2and HeNe fluxes,respectively. The responsivity of the GUNN device under CO2irradiation was calculated to be 0.023 A/W. Negative conductance change was attributed to thermal heating whereas the positive change was interpreted as resulting from carrier generation (photoconductive effect). (Author)