Lead-Tin Telluride Detector Materials by Chemical Vapor Phase Deposition.

摘要

This program was designed to study the feasibility of applying the metalorganic chemical vapor deposition technique to the preparation of PbSnTe single-crystal films on suitable substrates,to adjust the composition of the Pb(sub 1-x) Sn(sub x) Te films for peak response in the 11-12micrometers wavelength region (x approx. 0.2). To fabricate junction-type photovoltaic detectors and detector arrays in the films,and to characterize the resulting detectors to establish the present state of the art of detector material preparation by this technique. Progress toward achieving useful infrared detectors for the 11-12micrometers region was made in this program. The feasibility of metalorganic CVD processes for the preparation of PbTe, SnTe,and Pb(sub 1-x) Sn(sub x) Te with x>0.1was demonstrated. (Author)