A Curve-Fitted Circuits Model for Bipolar Transistor fT Roll-Off at High Injection Levels.

摘要

This paper introduces a simple empirical relationship for modeling the common-emitter short-circuit gain-bandwidth product (fT) of bipolar transistors operated in high-injection regimes. The model simulates the dependence of fT on both collector current and collector voltage to within an error of no more than 20 percent. (Author)