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Ion Implanted R2JFET'S for Operational Amplifier's.

机译:用于运算放大器的离子注入R2JFET'。

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摘要

The previous design work performed to develop a very resistant, radiation-hardened operational amplifier is summarized and analyzed. It was concluded that the use of ion implanted JFET's together with some circuit and layout modifications to the amplifier would result in a greatly improved circuit.

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