Mobility, Dopant and Carrier Distributions at the Interface Between Semiconducting and Semi-Insulating Gallium Arsenide.

摘要

Dopant and mobility distributions in an epitaxial semiconducting layer are determined by capacitance and Q-factor measurements between a gate electrode and a conducting channel. Degradation of mobility and carrier concentration by neutron bombardment is measured and the observed deterioration of the saturation current of junction field effect transistors is accounted for. It is shown that the C-V method for determining impurity distribution becomes invalid when the depletion layer adjacent to the gate electrode expands to a depletion layer adjacent to the substrate interface. Examples of artificial impurity distributions obtained by the C-V method are calculated for various model substrates and compared with measurements. (Author)