Transport Property of Zero-Gap Semiconductors under Tensile Stress.

摘要

The band structure of symmetry-induced zero-gap semiconductors under uniaxial tensile stress is studied. It is found that there exist regions in the reciprocal space where one component of the effective-mass tensor of either electrons or holes becomes negative. In particular, the anomalous region for holes can be made sufficiently large to allow for the occurrence of negative-differential-resistance (NDR) effect.