Linearity and Enhanced Sensitivity of the Shipley AZ-1350B Photoresist.

摘要

The properties of the Shipley AZ-1350-B positive photoresist used with the Shipley AZ-303A developer were investigated. It was found that the use of AZ-303A developer results in a significant improvement of the sensitivity and the linearity of the photoresist. The unexposed etch rate of the photoresist was 35 A tor- 5 A/sec. Gratings of high efficiency have been successfully fabricated using the above combination of photoresist and developer. (Author)