Transmission Electron Microscope Study of Oxidation-Induced Precipitate Defects in Boron-Implanted Silicon.

摘要

Boron-implanted silicon devices have been shown to be affected by the ambient conditions during implantation, anneal and drive-in diffusion. The presence of oxygen appears to be of major significance. This study was undertaken to observe directly by transmission electron microscopy defects existing in silicon implanted and annealed under varying conditions which might account for changes in device characteristics.