Chemical Vapor Deposition of Silicon Nitride.

摘要

Experimental work during the past year has established the basic processing outlines for the deposition of crystalline alpha-Si3N4 plates and dome geometries. Preliminary correlations between critical processing variables and microstructure have been established. Property evaluations of deposits include: flexure strength, Young's moduli, thermal expansion, electromagnetic transmittance and reflectance, microhardness and fracture toughness deduced from identation and grooved double-cantilever beam experiments. (Author)