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Annealing Studies of Beryllium in Gallium Arsenide and Gallium Arsenide Phosphide.

机译：砷化镓和砷化镓磷化物中铍的退火研究。

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Differential resistivity and Hall effect measurements, secondary ion mass spectrometry (SIMS), and low temperature (5 K) photoluminescence are utilized to study the annealing behavior of ion-implanted beryllium in GaAs and GaAs(0.6)P(0.4), and of beryllium incorporated in GaAs during growth by molecular beam epitaxy (MBE). (Author)

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McLevige, W. V.;
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年度 1977
页码 1-110
总页数 110
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium arsenides; Beryllium; Ion implantation; Annealing; Phosphides; Semiconductors; Molecular beams; Epitaxial growth; Electrical resistance; Hall effect; Photoluminescence; Theses; Gallium phosphides; Secondary ion mass spectroscopy; Molecular beam epitaxy;

机译：砷化镓;铍;离子注入;退火;磷化物;半导体;分子束;外延生长;电阻;霍尔效应;光致发光;论文;磷化镓;二次离子质谱;分子束外延;

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Annealing Studies of Beryllium in Gallium Arsenide and Gallium Arsenide Phosphide.

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