Solid State Imaging Device Parameter Study for Use in Electro-Optic Tracking Systems.

摘要

The introduction of the solid-state imaging device provides a new concept in sensor types which may be utilized in target trackers. Solid-state imagers do not require the high voltage technology used in conventional vidicons. Also, the possibility of on-chip signal processing of the video information makes the device very attractive in the area of scene evaluation. However, the devices actually provide a sampled image and have certain characteristics which limit their utilization as trackers or target acquisition sensors. The purpose of this study is three-fold. The first part consists of evaluating five existing trackers which utilize solid-state imagers as sensors. These imagers are of three types: charge-coupled devices (CCDs), charge injection devices (CIDs), and photodiode arrays. These trackers are investigated as the contrast, irradiance, and target velocity are varied on the image plane. Since the charge-coupled device shows great potential in this area, the next portion of the study is devoted to the evaluation of the CCD as a sensor in a tracking or target acquisition algorithm. Parameters are varied in a CCD simulation scheme to provide characteristics for the device. Contrast, target pattern signature, transfer efficiency, and grey level element tolerances can be varied for the simulation. The simulation provides a 100 x 100 element three-phase interline transfer device.