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An AC Large Signal Model for the GaAs MESFET.

机译:Gaas mEsFET的交流大信号模型。

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摘要

An AC large signal model for the GaAs FET is presented. It incorporates the device geometry and semiconductor properties and relates the terminal currents to the instantaneous applied voltages and their time derivatives. The model is efficient and fast when implemented on a digital computer. Its form is suitable for large signal component design and optimization. A power amplifier and an oscillator are analyzed to demonstrate the use of the model. (Author)

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