Electrical Characterization of 16K Dynamic RAMs.

机译：16K动态Ram的电气特性。

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Electrical characterizations were performed on 16K dynamic RAMs available from the merchant semiconductor industry. Based on the data obtained, parameter limits were established and proposed for a draft 38510 specification. The data, proposed limits, and related discussion are presented. (Author)

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austin, f. d. florini, j. r.;
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年度 1979
页码 1-139
总页数 139
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Memory devices; Semiconductor devices; Packaged circuits; Transistor transistor logic; Alpha particles; Electromagnetic compatibility; Military requirements; Silicon; Sources; Specifications; Dynamics; Response; Errors; Algorithms; Semiconductor computer storage; Random access memories;

机译：存储器件;半导体器件;封装电路;晶体管晶体管逻辑;α粒子;电磁兼容性;军事要求;硅;源;规格;动态;响应;误差;算法;半导体计算机存储器;随机存取存储器;

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Electrical Characterization of 16K Dynamic RAMs.

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