Nitrogen Isoelectronic Traps in Gallium Arsenide Phosphide and Aluminum Gallium Arsenide

摘要

The results presented here form the basis for reinterpreting N-trap luminescence in GaAs sub 1-x P sub x and Al sub x Ga sub 1-x As. Previously the luminescence of these centers in ternary alloys was attributed to NN pairs. For the isolated N center, only one bound state was identified, and that corresponded to the A-line in GaP (or AlAs). On the basis of the new data, it is now clear that dominant emission (termed N sub x) is due not to NN pairs but to isolated N and previously ignored phonon coupling. Furthermore, in GaAs sub 1-x P sub 1-x it is found an additional shallow bound state associated largely with the gamma sub 1 band minimum.