Room Temperature Synthesis of Pure Si, Si3N4, Si3N4On, and K2SiF6 by Laser Photochemical Reactions

摘要

Using 11 watts/sq cm of 10.764 micron frequency of a CO2 laser line as a source to irradiate 35 torr total pressure of the reactants SiH4 and NF3 in various ratios of partial pressure at room temperatures, Si3N4, pure Si, Si3N4On, K2SiF6, and SiH(x)F(y) have been produced. This represents an energy efficiency well over 200 percent and is a cost-effective method of synthesizing the above materials.