Laser Annealing of and Laser Interactions with Ion Implant Semiconducting Materials

摘要

A Q-switched ruby laser was used to irradiate implanted and unimplanted GaAs and Si. Time-resolved reflectivity measurements, which determine the length of time that the surface of the sample is melted, were performed during the laser annealing process. The length of melt versus energy density was plotted for both the implanted and unimplanted samples. No difference in the melt time was observed between implanted and unimplanted samples at high energy densities. The threshold for melting in the implanted samples was found to be lower than the virgin samples, and the energy density required to produce melting in GaAs was about 2/5 that needed for Si. The results obtained were compared to reported experimental work and numerical calculation on laser annealing. Optical reflectivity techniques, performed by Lt. Mullins were used to determine the crystallinity of the samples after annealing. (Author)