Growth of Single Crystal Gallium Phosphide by Liquid Phase Epitaxy and Synthesis Solute Diffusion

摘要

The objective of this research program was to further develop the synthesis-solute-diffusion (SSD) and liquid-phase epitaxy (LPE) techniques for the growth of high-quality gallium phosphide. This program resulted in the growth of epitaxial layers of GaP which had excellent growth morphology and carrier concentrations approximately 3 over 5 x 10 to the 15 power. The SSD technique was advanced so that low dislocation density bulk GaP could be grown. Carbon was identified as the principal acceptor in this material which limited the carrier concentration to approximately 3 over 2 x 10 the 16 power. An extensive materials evaluation program was conducted as a part of this development. The morphology of the grown material was analyzed by optical and electron-microscopic techniques. Hall and resistivity analysis was used to determine the majority carrier transport properties. The carrier concentration profiles were determined by capacitance-voltage measurements. The deep levels were investigated by photocapacitance spectroscopy, and the minority carrier diffusion lengths were measured by the Schottky-barrier photo current technique. (Author)