Method for Controlling the Resonance Frequency of Yttrium Iron Garnet Films

摘要

A method for controlling the resonance frequency of single crystal yttrium iron garnet (YIG) films by incorporating lead as a partial substituent for the yttrium component of the YIG film. This invention relates to yttrium iron garnet films and to a method for their preparation. More particularly, this invention concerns itself with a method for controlling the resonance frequency of single crystal yttrium iron garnet (YIG) films grown by liquid phase epitaxy (LPE). Single crystal yttrium iron garnet, having the formula Y3Fe5O12 and being hereinafter referred to as YIG, is an important crystalline material finding wide application for use in a variety of electronic devices. The material can be utilized in either its single crystal bulk form or as a single crystal film grown on a suitable substrate. In bulk form, the material is often used as an optical modulator, a magnetic flux sensor and in magneto-optical memory devices because of its faraday effect. The major interest in the film form is for applicatons in magnetic bubble domain devices and in microwave signal processing devices