硅基光电集成技术是当代高速信息化的重要发展方向之一.为了研究制备在硅衬底上的新型发光材料,突破Nd∶YAG固体激光工作物质主要是晶体、透明陶瓷等固体形态的限制,采用电子束蒸发沉积工艺,在硅(100)衬底上制备了Nd∶ YAG薄膜,并对Nd∶YAG薄膜的表面形貌、晶体结构、光学特性进行了测试.X射线和扫描电子显微镜测试结果显示,Nd∶YAG薄膜经1100℃真空高温退火处理1h后有效结晶,采用钛蓝宝石激光器输出808nm激光激发,液氮冷却的InGaAs阵列探测器室温下得到Nd∶YAG薄膜的1064nm主荧光峰的荧光光谱.结果表明,采用电子束蒸发沉积和后续高温退火工艺可以在硅衬底上制备Nd∶YAG晶体薄膜.%Si-based optoelectronic integration technology is one of the main study topics and development directions for the high-speed information. New Si-based luminescent materials were developed to break the limits of Nd: YAG solid laser material, which was confined by two main solid states: single crystal and transparent ceramics. Nd: YAG thin film was prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphology, crystalline phase and optical properties of Nd:YAG thin film were characterized by X-ray diffraction, scanning electron microscopy and spectrophotometer. The crystallization of Nd:YAG thin film was improved after annealing at ll00'C for lh in the vacuum, photoluminescent spectra of Nd:YAG thin film were measured at room temperature, with 808nm radiation from a Ti: sapphire laser, and photoluminescent spectrum in the region of 1064nm peak was detected by a liquid nitrogen cooled InGaAs detector array. The results showed thai Nd: YAG crystalline thin film was grown on Si substrates for the first time by means of electron beam evaporation deposition and subsequent high temperature annealing process.
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