Millimeter-Wave Self-Mixing InP and GaAs Gunn Oscillators

摘要

Self-oscillating mixers in both dielectric and waveguide cavities have been investigated in the 60 GHz frequency range. The devices consist of negative resistance diodes of GaAs and InP material coupled to waveguide cavities or high resistivity dielectric cavities such as silicon or Al2O3. Experimental measurements show that these devices have a sensitivity in the order of -80dBm with the intermediate frequency at 60 MHz and an IF bandwidth of 120 MHz. Applications are suggested based on minimum detectable signal and RF power capabilities for systems requiring small size and low cost. (Author)