首页> 外国专利> GUNN DIODE OSCILLATOR AND MANUFACTURING METHOD OF GUNN DIODE OSCILLATOR

GUNN DIODE OSCILLATOR AND MANUFACTURING METHOD OF GUNN DIODE OSCILLATOR

机译:枪型二极管振荡器及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a gunn diode oscillator in which a heat dissipation effect is enhanced, and an electrical characteristic is improved.;SOLUTION: In a gunn diode oscillator, a gunn diode element as an oscillation element is mounted on an insulation substrate having a conductive path made of a conductive material on both main surfaces. The gunn diode oscillator is jointed so that a concave part formed on a heat dissipation substrate made of a heat conduction material is fitted to a pair of penetration holes formed on the insulation substrate, and an anode electrode of the gunn diode element is connected to the convex part. By suppressing the occurrence of a residual inductance generated when using the conventional penetration holes and the conductive path, an electrical characteristic can be improved. Further, the gunn diode oscillator in which a low cost and a simplified form are achieved.;SELECTED DRAWING: Figure 2;COPYRIGHT: (C)2017,JPO&INPIT
机译:要解决的问题:提供一种耿氏二极管振荡器,其中增强了散热效果,并且改善了电特性。解决方案:在耿氏二极管振荡器中,耿氏二极管元件作为振荡元件被安装在绝缘基板上在两个主表面上具有由导电材料制成的导电路径。接合所述耿氏二极管振荡器,使得形成在由导热材料制成的散热基板上的凹部被装配到形成在所述绝缘基板上的一对贯通孔中,并且所述耿氏二极管元件的阳极电极被连接到所述绝缘基板上。凸部。通过抑制在使用传统的通孔和导电路径时产生的残留电感的发生,可以改善电特性。进一步地,实现了低成本且简化形式的耿氏二极管振荡器。选图:图2;版权所有:(C)2017,JPO&INPIT

著录项

  • 公开/公告号JP2017163371A

    专利类型

  • 公开/公告日2017-09-14

    原文格式PDF

  • 申请/专利权人 NIPPON DEMPA KOGYO CO LTD;

    申请/专利号JP20160046555

  • 发明设计人 ONZUKA TATSUNORI;

    申请日2016-03-10

  • 分类号H03B9/12;H01L47/02;

  • 国家 JP

  • 入库时间 2022-08-21 14:01:52

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号