August 1979 LSI Static Memory Tests

摘要

Several types of LSI static RAM's have been tested with heavy ions from the Lawrence Berkeley Laboratory 88 Cyclotron. Sufficient data were obtained to make the estimate that the latchup probability due to cosmic rays in space is approximately 0.02 per chip per year, for the MM54C929 RAM. The tests also showed that MWS5501 RAM's are essentially immune to cosmic-ray induced soft errors and latchup. Furthermore, it was found that the commercial version of the HM6508 is susceptible to both latchup and soft errors, while the various rad-hard versions of the same device are immune to cosmic-ray induced latchup and relatively hard against soft errors (approx. 1 x 10 to the minus 7th power per bit per day). (Author)