Simulation of Pulsed Impatt Oscillators and Injection-Locked Amplifiers

摘要

A method for simulating the dynamic behavior of pulsed IMPATT oscillators using a quasi-static approximation is presented. The method used to characterize the IMPATT diode is explained. A particular circuit model is used which models the cylindrical cavity power combining circuit. The overall device-circuit interaction technique is outlined. Simulation results for a high-low, single-drift X-band GaAs IMPATT are presented. The method presented here can be employed for any type of IMPATT device. The pulsed oscillator properties of double-drift IMPATT diode structures are presently being investigated. (Author)