Radiation Damage and Annealing Effects Studies of Silicon-Implanted Gallium Arsenide.

摘要

Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author)