Raman Study of the Mechanism of Electrical Switching in Cu TCNQ Films

摘要

The mechanism of electrical switching in Cu/Cu TCNQ films has been studied in situ by Raman spectroscopy. The initial film is Cu(+)TCNQ(-), while neutral TCNQ was found to be present in the system after electrical switching, produced by a redox reaction caused by the field. The amount of TCNQ after switching was found to increase with the time of application of the electric field, while the amount of Cu TCNQ was reduced. (Author)