New Synthesis for (Trifluoromethyl)thio Organometallic Compounds by Low-Temperature Cocondensation of (Trifluoromethyl)thio Radicals and Metal Vapor

摘要

This paper reports work involving the reaction of metal vapor with (trifluoromethyl) thio radicals. The radicals were produced in a low-temperature glow discharge of bis (trifluoromethyl) disulfide. The synthesis of (trifluoromethyl) thio organometallic compounds, in spite of the fact that the discharge precursor for this radical is much less specific or selective than in previously reported work emphasizes one to the strengths of this reaction pathway to sigma bonded organometallic compounds. The advantage is specifically that it is not necessary to have an extremely clean source of radicals in order to affect the reaction. Here the critical factor is simply the statistics of the recombination of metals with radicals. One obtains the statistically expected percentage of the homoleptic compound based on the relative concentrations of each radical present. The reaction of (trifluoromethyl) thio radicals generated in a low-temperature glow discharge provides a synthetic route to highly substituted (trifluoromethyl) thio organometallic compounds. In addition to the SCF3 radical, CF3 radicals were also produced in a ratio of approximately 2.7 to 1 and resulted in additional products. Reducing the radio frequency power delivered to the plasma had little effect on the ratio of SCF3 to CF3 radicals.