CSFIT: A FORTRAN Program for Charge-Sheet Model Fitting of MOSFET Data.

摘要

A FORTRAN program, CSFIT, has been developed for fitting an expression for the current-voltage (I-V) characteristics of a long-channel MOSFET to experimental I-V curves. The one-dimensional charge-sheet model developed by Brews provides the basis for the I-V characteristics. The I-V characteristics given by this model are optimized with respect to a set of experimental data using the flatband voltage and the mobility as the only adjustable parameters. The program is written so that multiple sets of I-V data can be fit simultaneously if desired. The user must supply, in specified formats, a current-voltage data file, a device parameter file, and a starting value file. (Author)