Development and Application of SIMS (Secondary Ion Mass Spectrometry) Characterization Techniques for the Study of Impurities and Impurity Motion in (HgCd)Te and CdTe

摘要

The tasks in the Statement of Work for this Contract were: Develop quantitative methods of secondary ion mass spectrometry (SIMS) analysis; and Study the incorporation and redistribution of impurities in (HgCd)Te and CdTe. The second task included investigation of MeV ion implantation into (HgCd)Te and development of image processing techniques for potentially quantitative investigation of laterally distributed impurities. The mechanisms and protocols developed were applied to various kinds of (HgCd)Te and it homologs in the characterization of a variety of dopants and impurities of interest to DARPA and its subcontractors. These applications elucidated the mechanism of boron incorporation during the LEC growth of CdTe.