Spatial Concentrations of Silicon Atoms in RF Discharges of Silane

摘要

A capacitively coupled, RF glow discharge of silane in argon was studied to determine the spatial concentration of silicon atoms. Laser-induced fluorescence was used to determine the ground state concentration profiles. The fluorescence profiles clearly show the sharp boundaries of the sheath regions. These profiles were much more sensitive to plasma chemistry changes than profiles obtained from plasma emission. Experiments with nitrogen addition demonstrated significant changes in the silicon atom profiles near the sheath boundary.