Fundamental Quantum 1/F Noise in Ultrasmall Semi Conductor Devices and Their Optimal Design Principles

摘要

A second-quantized derivation of the quantum (1/f) effect was developed. This derivation is based on the pair correlation function and automatically includes the right form of exchange between fermions and between bosons. Also for the first time a direct calculation of the effect of a finite mean free path was performed. This calculation justifies the calculation of quantum (1/f0 noise and results in a correction factor of the order of the unity. As a first step of a more general study of (1/f) in semiconductor devices (n+-p) diodes have been investigated with emphasis on (HgCdTe) photodetectors. Quantum (1/f) noise has been calculated in the surface and bulk recombination currents, in the diffusion and field currents, and in the tunneling currents. Due to the large localized electric field at the surface, a larger fractional quantum (1/f) nosie power is obtained for surface recombination currents than for similar bulk recombination currents. All quantum (1/f) noise calcualtions are first principles calculations with no free parameters, based on the quantum (1/f) effect in scattering and recombination cross sections, as well as in tunneling rates.