Quaternary Narrow-Band Semiconductors (HgTe)x(InSb)1-x for Far-Infrared Detectors

摘要

This annual report includes a description of results from work on an investigation of the quaternary system (HgTe)x(InSb)1-x in accordance with Project N00014-83-K-0588 during the second year, from September 1, 1984 to August 31, 1985. In the course of this time period, the systems for Bridgman-stockbarger growth, hot-wall epitaxial growth, and isothermal epitaxial growth were designed, assembled, and tested. On the basis of the results of the testing stage, the temperature-pressure-time regimes for single-crystal and epitaxial layer growth were developed. Several single crystals of the solid solutions of HgTe in InSb with the HgTe contents up to 15 mole percent were grown and assessed. The report includes growth parameters for the bulk crystals with composition x = 0.05, 0.10, 0.12 and 0.15. These crystals cover the energy gap range from 0.10 to 0.14 eV or the cut-off wavelength range from 12.4 to 8.9 micrometers.