Side Gating Reduction for GaAs Integrated Circuits by Using a New Buffer Layer.

摘要

Side gating effects relevant to GaAs digital, analog, and monolithic microwave integrated circuits have been significantly reduced or eliminated by using a new high-resistivity GaAs buffer layer grown at low substrate temperatures by molecular beam epitaxy (MBE). The high resistivity of the low-temperature (LT) GaAs buffer is attributed to an arsenic excess of -1 at %. The performance of MESFET's with the LT GaAs buffer is compared with that of MESFET's with a conventional undoped GaAs buffer grown by MBE at normal substrate temperatures. Reprints. (rrh)