Waveform Relaxation Applied to Transient Device Simulation

摘要

This paper investigates the possibility of accelerating the transient simulation of Metal Oxide Semiconductor devices by using waveform relaxation. Standard spatial discretization techniques are used to generate a large, sparsely-connected system of algebraic and ordinary differential equations in time. The waveform relaxation (WR) algorithm for solving such a system is described, and several theoretical results that characterize the convergence of WR for device simulation are given. In addition, one-dimensional experimental results are presented.